Toshiba MG300Q1US1
#MG300Q1US1 Toshiba MG300Q1US1 New 1IGBT: 300A1200V, MG300Q1US1 pictures, MG300Q1US1 price, #MG300Q1US1 supplier
-------------------------------------------------------------------
Email: [email protected]

-------------------------------------------------------------------

MG300Q1US1 Description

MG300Q1US1, V(ces): 1200V V(ges): 20V 2000W insulated gate bipolar transistor. For high power switching and motor control applications

MG300Q1US1  1.10 lbs

Target_Applications

MG300Q1US1 could be used in High Power Switching / Motor Control Applications

Features

N Channel IGBT (High Power Switching / Motor Control Applications)
1IGBT: 300A1200V