Toshiba MIG50J7CSB1W
#MIG50J7CSB1W Toshiba MIG50J7CSB1W New Insulated Gate Bipolar Transistor 50A I(C) 600V V(BR)CES, MIG50J7CSB1W pictures, MIG50J7CSB1W price, #MIG50J7CSB1W supplier
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Manufacturer Part Number: MIG50J7CSB1W
Part Life Cycle Code: Active
Ihs Manufacturer: MITSUBISHI ELECTRIC CORP
Manufacturer: Mitsubishi Electric
Risk Rank: 5.73
Collector Current-Max (IC): 50 A
Collector-Emitter Voltage-Max: 600 V
Number of Elements: 1
Operating Temperature-Max: 100 °C
Subcategory: Insulated Gate BIP Transistors
VCEsat-Max: 2.2 V
Insulated Gate Bipolar Transistor 50A I(C) 600V V(BR)CES